Preksha Tiwari, Anna Fischer, et al.
CLEO/Europe-EQEC 2021
We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.
Preksha Tiwari, Anna Fischer, et al.
CLEO/Europe-EQEC 2021
Heinz Schmid, Mikael T. Björk, et al.
Nano Letters
Volker Schmidt, Philipp F. J. Mensch, et al.
Applied Physics Letters
Matthias Geissler, André Bernard, et al.
JACS