About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Nucleation controlled phase selection in vanadium/amorphous silicon multilayer thin films
Abstract
Cross-sectional transmission electron microscopy, isothermal and constant-heating-rate calorimetry, and thin film x-ray diffraction have been used to investigate amorphous and crystalline silicide phase formation in vanadium/amorphous silicon multilayer thin films. The atomic concentration ratio of the films was one V atom to two Si atoms and the modulation period was either 14 or 50 nm. The first silicide phase to form at the vanadium/amorphous silicon interface was amorphous-vanadium-silicide. Heating to temperatures above 750 K caused crystalline VSi2 to form at the amorphous-vanadium-sihcide/amorphous silicon interface. Analysis of cross-sectional transmission electron microscopy and both isothermal and constant-scan-rate calorimetric data suggest that nucleation barriers control the formation of crystalline VSi2. © 1990, American Vacuum Society. All rights reserved.