Nonvolatile Semiconductor Memory Devices

Abstract

An attempt is made to survey and assess the nonvolatile semiconductor memory devices including charge-storage devices and FET's with ferroelectric gate insulators. The charge-storage devices are further divided into two groups: 1) charge-trapping devices such as the MNOS and the MAOS, and 2) floating-gate devices such as the FAMOS and the DDC. Approaches for achieving virtual nonvolatility in otherwise volatile semiconductor memories are briefly discussed. Novel structures which provide nonvolatility as well as the theoretical limit of memory array density are also explored. Copyright © 1976 by The Institute of Electrical and Electronics Engineers, Inc.