About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
MRS Fall Meeting 1998
Paper
Nonlinear dielectric relaxation of Mn doped polycrystalline (Ba,Sr)TiO3 thin films over the temperature range of 4.2 - 473 K
Abstract
We have investigated the dielectric relaxation currents of Mn doped polycrystalline Ba0.7Sr0.3TiO3 (BSTO) thin films as a function of applied electric field and temperature (4.2 - 473 K). The dielectric relaxation currents followed a power law time dependence, J(t) = Jot-n, over the entire temperature range. Plots of log(Jo) vs. reciprocal temperature were not linear and showed slopes approaching values of 0.35 eV at high temperatures which rapidly decreased to 0.25 meV at lower temperatures. The relaxation currents were found to be nonlinear with applied field. The observed nonlinearity of the field dependence of the relaxation currents can be understood in terms of the nonlinear relaxation component of the total capacitance. An equivalent circuit model for a paraelectric BSTO thin film capacitor is presented and possible polarization mechanisms are briefly discussed.