Publication
Chemical Physics Letters
Paper

Non-thermal effects in laser-enchanced etching of silicon by XeF2

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Abstract

Mass spectrometric studies of the products of the reaction of XeF2 with silicon in the dark and under visible illumination have been carried out. The data show that photo-enchancement of the reaction is substantially different from thermal enchancement. It is proposed that photogenerated charge carries influence strongly both the overall etch rate and the reaction product distribution. © 1983.

Date

18 Feb 1983

Publication

Chemical Physics Letters

Authors

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