Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
We have investigated nickel in silicon samples with a wide range of initial doping concentrations by EPR, DLTS and photo-EPR techniques. Our results show that the two different Ni-centers which were observed previously by EPR, but whose structure could not be interpreted unambiguously, are both associated with Ni in a substitutional position. They are distinguished by their charges and by slightly different displacements from the ideal substitutional site. A model for the Nis+-center is suggested which explains the symmetry of this center.
T.N. Morgan
Semiconductor Science and Technology
R. Ghez, J.S. Lew
Journal of Crystal Growth
P. Alnot, D.J. Auerbach, et al.
Surface Science
Michiel Sprik
Journal of Physics Condensed Matter