Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We have investigated nickel in silicon samples with a wide range of initial doping concentrations by EPR, DLTS and photo-EPR techniques. Our results show that the two different Ni-centers which were observed previously by EPR, but whose structure could not be interpreted unambiguously, are both associated with Ni in a substitutional position. They are distinguished by their charges and by slightly different displacements from the ideal substitutional site. A model for the Nis+-center is suggested which explains the symmetry of this center.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
J. Tersoff
Applied Surface Science
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials