B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
We have investigated nickel in silicon samples with a wide range of initial doping concentrations by EPR, DLTS and photo-EPR techniques. Our results show that the two different Ni-centers which were observed previously by EPR, but whose structure could not be interpreted unambiguously, are both associated with Ni in a substitutional position. They are distinguished by their charges and by slightly different displacements from the ideal substitutional site. A model for the Nis+-center is suggested which explains the symmetry of this center.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters