J.C. Marinace
JES
This work presents a new approach to fabricate buried GaInAs/InP nanostructures in a single growth step by metalorganic vapor-phase epitaxy (MOVPE) on patterned substrates. First, it is demonstrated that GaInAs layers can be buried in situ into InP by selective-area MOVPE. Then, it is shown that in situ-buried GaInAs/InP quantum dot arrays can be fabricated by this latter technique. These quantum dots are found to have a high luminescence efficiency, even at room temperature. © 1991.
J.C. Marinace
JES
T.N. Morgan
Semiconductor Science and Technology
J.A. Barker, D. Henderson, et al.
Molecular Physics
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009