F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
This work presents a new approach to fabricate buried GaInAs/InP nanostructures in a single growth step by metalorganic vapor-phase epitaxy (MOVPE) on patterned substrates. First, it is demonstrated that GaInAs layers can be buried in situ into InP by selective-area MOVPE. Then, it is shown that in situ-buried GaInAs/InP quantum dot arrays can be fabricated by this latter technique. These quantum dots are found to have a high luminescence efficiency, even at room temperature. © 1991.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Julien Autebert, Aditya Kashyap, et al.
Langmuir