IEDM 1996
Conference paper

Monolithic Spiral Inductors Fabricated Using a VLSI Cu-Damascene Interconnect Technology and Low-Loss Substrates

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This paper presents spiral inductor structures optimized in a Cu-damascene VLSI interconnect technology with use of silicon, high-resistivity silicon (HRS), or sapphire substrates. Quality factors (Q) of 40 at 5.8 GHz for a 1.4 nH-inductor and 13 at 600 MHz for a 80 nH-inductor have been achieved.