Minority carrier injection and storage into a heavily doped emitter. Approximate solution for auger recombination

Abstract

An analytic solution for the injected carrier distribution in a linearly graded, heavily doped region is given in terms of Hermite polynomials. The properties of this distribution are compared with those for the more usual diffusion length solution. An expression is given for the effect on high frequency response of the stored charge in the emitter region of a bipolar transistor. © 1981.