Ellen J. Yoffa, David Adler
Physical Review B
The growth of high-quality epitaxial CaSi2 films on Si(111) is described along with a determination of the silicide atomic structure and the structure of the CaSi2/Si interface. These films constitute the first example of an epitaxial non-transition-metal silicide. The lack of d electrons and the large difference in electronegativity between Ca and Si promise to endow epitaxial calcium silicide and the silicide-silicon interface with intriguingly different electronic properties from the thoroughly studied transition-metal silicides. © 1988 The American Physical Society.
Ellen J. Yoffa, David Adler
Physical Review B
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989