A. Krol, C.J. Sher, et al.
Surface Science
The growth of high-quality epitaxial CaSi2 films on Si(111) is described along with a determination of the silicide atomic structure and the structure of the CaSi2/Si interface. These films constitute the first example of an epitaxial non-transition-metal silicide. The lack of d electrons and the large difference in electronegativity between Ca and Si promise to endow epitaxial calcium silicide and the silicide-silicon interface with intriguingly different electronic properties from the thoroughly studied transition-metal silicides. © 1988 The American Physical Society.
A. Krol, C.J. Sher, et al.
Surface Science
K.A. Chao
Physical Review B
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Ellen J. Yoffa, David Adler
Physical Review B