Hans Joachim Quenzer, Ute Drechsler, et al.
Eurosensors 2011
Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.
Hans Joachim Quenzer, Ute Drechsler, et al.
Eurosensors 2011
Tomas Tuma, Walter Haeberle, et al.
CDC 2012
H. Pozidis, Nikolaos Papandreou, et al.
IMW 2012
Harish Bhaskaran, Bernd Gotsmann, et al.
Nature Nanotechnology