Abu Sebastian, Angeliki Pantazi, et al.
IEEE TNANO
Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.
Abu Sebastian, Angeliki Pantazi, et al.
IEEE TNANO
Ning Li, Kevin Brew, et al.
MRS Fall Meeting 2021
Venkataraman Kartik, Abu Sebastian, et al.
Mechatronics
Ning Li, Charles Mackin, et al.
Advanced Materials