William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
We have observed controlled, low-voltage breakdown of the quantum Hall state in GaAs-AlxGa1-xAs heterostructures with lateral constrictions a few micrometers in width. The breakdown characteristics show an onset of dissipation at voltages corresponding to the cyclotron energy for even filling factors. Analysis of these results in terms of a simple model implies that the dissipation process involves interlevel as well as intralevel scattering, and therefore that large potential gradients are present in the two-dimensional electron gas. © 1986 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering