Low power 77 K nano-memory with single electron nano-crystal storage

Abstract

The experimental results of a threshold-shifting nano-memory are presented. The observations are consistent with single electron storage in nano-crystals and offer possible evidence of Coulomb blockage at 77 K. The nano-memory consists of a silicon field-effect transistor with nano-crystals of silicon placed in the gate oxide in close proximity of the inversion surface. Electron charge is stored in these isolated 5-10 nm size nano-crystals which are separated from each other by >5 nm of SiO2 and from the inversion layer on the substrate surface by sub-2 nm of SiO2. Charge is injected from the inversion layer and its storage in the nano-crystals causes a shift in the threshold voltage which is sensed via current. The magnitude of this threshold shift is relatable to the charge in the nano-crystals, oxide thicknesses, and other device parameters.