Low capacitance HTS junctions for single electron transistors

Abstract

We have fabricated and characterized YBa2Cu3O7-δ grain boundary junctions to determine their feasibility as tunnel barriers in single electron transistors. Superconducting quantum interference devices with injection lines have been used to measure the junctions capacitance. We have extracted capacitance values which allow us to achieve a Coulomb blockade regime for sufficiently small junction dimensions. © 2009 Elsevier B.V. All rights reserved.