INVITED: Electron beam-accessed data storage in MOS capacitors

Abstract

THE INTERACTION of energetic electrons with semiconductors is exploited in numerous devices. While well established in secondary-emission current amplifiers, oxide matrix storage tubes, image orthicons and videcons, it is more recently being employed in EBS (electron beam semiconductor) microwave amplifiers and in image detection and processing with CCD arrays. Recent developments in this technology now promise to have a major impact upon the world of computers, particularly in the area of large memories. It is not generally recognized that this relative newcomer to memory technology is a strong contender to fill the now notorious cost/performance memory gap; Figure 1.