Electrochemical and Solid-State Letters

Interhalogen Plasma Chemistries for the Etching of NiMnSb

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NiMnSb thin films have been etched in plasma chemistries ICl and IBr, under inductively coupled plasma conditions. These interhalogens produce practical etch rates (500-1500 Å/min-1) provided the incident ion energy is above threshold values (∼120 eV for ICl, ∼230eV for IBr) and there is a balance of etch product formation and desorption through control of the ion and reactive neutral fluxes. Both chemistries appear promising for pattern transfer in NiMnSb-based spin polarized magnetic devices. © 1999 The Electrochemical Society. All rights reserved.