Optimization algorithms for energy-efficient data centers
Hendrik F. Hamann
InterPACK 2013
An investigation of trap states at the semiconductor-oxide interface of single silicon nanowires is presented using vertical gateall-around nanowire MOS capacitors. By performing highly accurate capacitance-voltage measurements at room temperature, the energetic distribution of interface traps Dit could be extracted with the quasi-static method. Although the capacitance of a single nanowire MOS capacitor with Al2O3 gate oxide is only 2 fF, Dit values were obtained with good reproducibility. For etched, vertical Si nanowires, Dit in the range of (4 ± 1) × 1012 cm-2eV-1 was obtained. © 2002-2012 IEEE.
Hendrik F. Hamann
InterPACK 2013
Ziyang Liu, Sivaramakrishnan Natarajan, et al.
VLDB
Michael C. McCord, Violetta Cavalli-Sforza
ACL 2007
Zohar Feldman, Avishai Mandelbaum
WSC 2010