InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base

Abstract

The first N-p-n InP/InGaAs heterojunction bipolar transistors (HBT's) with p-type carbon doping in InGaAs are reported. P-type carbon doping in the InGaAs base has been achieved by gas-source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCI4) as the dopant source. The resulting hole concentration in the base was 1 x 1019 cm-3. HBT's fabricated using material from this growth method display good I- V characteristics with dc current gain above 500. This verifies the ability to use carbon doping to make a heavily p-type InGaAs base of an N-p-n HBT. © 1992 IEEE