InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
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8 results for Peter M. Asbeck
Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source
- M.V. Fischetti
- S. Jin
- et al.
- 2009
- IWCE 2009
Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model
- M.V. Fischetti
- S. Jin
- et al.
- 2009
- Journal of Computational Electronics
Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
A theory of high-frequency distortion in bipolar transistors
- Mani Vaidyanathan
- Masaya Iwamoto
- et al.
- 2003
- IEEE T-MTT
A 26.5 GHz Silicon MOSFET 2:1 Dynamic Frequency Divider
- Matt Wetzel
- Leathen Shi
- et al.
- 2000
- IEEE Microwave and Guided Wave Letters
InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
- R.C. Gee
- C.L. Lin
- et al.
- 1993
- Electronics Letters
Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- D. Yan
- Fred H. Pollak
- et al.
- 1992
- Applied Physics Letters