Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist

The influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist was investigated. It was found that blurring was caused by thermally assisted diffusion of photogenerated acid. Experimental and kinetic modeling investigations of coupled reaction-diffusion in a resist system showed high efficiency of acidolysis chemistry at the edge of an exposed region. Resist films were imprinted with 866 and 192 nm pitch gratings generated by interferometric lithography. Simulations permitted visualization of the relationship between the acid latent image and developable image that formed in the polymer.