Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Amorphous Si thin films have been crystallized by in situ annealing in the transmission electron microscope. Crystallization occurred at about 700°C in electron-beam-deposited Si films, 400 Å thick, on amorphous Si3N4 substrates. Dendritic Si crystallites were observed with ⟨110⟩ and ⟨111⟩ orientations. The fast growth direction was parallel to ⟨112⟩. All crystallites were internally twinned with Σ = 3, (111) twin boundaries providing nucleation sites for atom attachment. The amorphous-crystal interface propagation was recorded on videotape to study the mechanism of crystallization. Interface velocities were measured at several temperatures and an activation energy of 3·36±0·23 eV was obtained for crystal growth. © 1993 Taylor & Francis Group, LLC.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.C. Marinace
JES
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
M.A. Lutz, R.M. Feenstra, et al.
Surface Science