A detailed static and low frequency noise characterization of InGaAs/OI MOSFETs has been performed. The mobility in long channel devices is very good for such 20nm thin film III-Vvv channels. However, the mobility in short channel devices is strongly degraded down to sub 10nm. As in Silicon MOSFETs, this mobility limitation in scaled devices could originate from similar process-induced channel scattering centers in both III-V and Si MOSFETs. The gate dielectric/channel interface also reveals a high density of fast as well as slow oxide traps as measured by subthreshold swing and LF noise.