Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
We have calculated the density of states for an exactly soluble model of a charged impurity in a disordered insulator. We find that the states associated with the impurity have the same mean energy as those found in the corresponding crystal, but have a spread in energies determined by the degree of the disorder. These results are compared favorably to results previously obtained for a more realistic model representing charged impurities in a-Si. The results also shed some light on the general nature of the localized states in the gap of an amorphous semiconductor. © 1979 The American Physical Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering