Publication
EUROSOI-ULIS 2016
Conference paper

III-V-based hetero tunnel FETs: A simulation study with focus on non-ideality effects

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Abstract

We present semi-classical simulations of Gate-overlapped-Source Tunnel Field Effect Transistors (GoS-TFETs) taking into account the effects of trap-Assisted tunneling, channel quantization, surface roughness, and density-of-state tails.

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Publication

EUROSOI-ULIS 2016

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