About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Conference paper
Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs
Abstract
The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In0.53Ga0.47As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.