About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEDM 2004
Conference paper
Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment
Abstract
Two-dimensional Ge n-channel DGFETs with LG = 7.5 nm and t Ge = 2 nm are simulated in the ballistic limit. The best intrinsic switching performance is found for [110]/[4421] transport/quantization alignments, and is 13% better than Ge [110]/[110] and 23% better than Si [100]/[001] or [110]/[001]. ©2004 IEEE.