History dependence of output characteristics of silicon-on-insulator (SOI) MOSFET's

Abstract

It is demonstrated that the drain current overshoot in partially depleted SOI MOSFET's has a significant history dependence or memory effect, even in the absence of impact ionization under low drain biases. The measured output characteristics of partially depleted SOI MOSFET's are shown to be dynamically dependent on their switching history, frequency, and bias conditions due to the finite time constants of carrier generation (thermal or impact ionization) and recombination in the floating body.