Single pulse output of partially depleted SOI FETs

Abstract

Floating body effects in partially-depleted silicon-on-insulator (SOI) field effect transistors leads to variation in the threshold voltage. This, in turn, gives rise to variations in drain current depending on bias conditions and device history. A method was developed to measure drain currents and full I-V curves for single pulses. This technique allows the device characteristics of any one of a series of pulses to be obtained, thus, accounting for the effect of the prior activity of a device on its output.