Kigook Song, Robert D. Miller, et al.
Macromolecules
The conductivity of n channel MOSFET devices has been measured in the temperature range 4.2K<or=T<or=77K in samples with varying densities of interface charge. Contrary to previous results in this temperature range, the conductivity obeys the law lg sigma varies as T-1/3 indicative of a variable range hopping mechanism. The minimum metallic conductivity is found to vary linearly with the average separation of the oxide charge, contrary to prediction.
Kigook Song, Robert D. Miller, et al.
Macromolecules
T. Schneider, E. Stoll
Physical Review B
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano