Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
The conductivity of n channel MOSFET devices has been measured in the temperature range 4.2K<or=T<or=77K in samples with varying densities of interface charge. Contrary to previous results in this temperature range, the conductivity obeys the law lg sigma varies as T-1/3 indicative of a variable range hopping mechanism. The minimum metallic conductivity is found to vary linearly with the average separation of the oxide charge, contrary to prediction.
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
David B. Mitzi
Journal of Materials Chemistry
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials