Publication
Journal of Physics C: Solid State Physics
Paper

High temperature 'variable range hopping' conductivity in silicon inversion layers

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Abstract

The conductivity of n channel MOSFET devices has been measured in the temperature range 4.2K<or=T<or=77K in samples with varying densities of interface charge. Contrary to previous results in this temperature range, the conductivity obeys the law lg sigma varies as T-1/3 indicative of a variable range hopping mechanism. The minimum metallic conductivity is found to vary linearly with the average separation of the oxide charge, contrary to prediction.

Date

06 Feb 2001

Publication

Journal of Physics C: Solid State Physics

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