International Conference on Characterization and Metrology for ULSI Technology 2005
Conference paper

High resolution profiling using ion scattering and resonant nuclear reactions

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This paper presents the basic principles of medium energy ion scattering and of nuclear resonant reaction profiling, which at present constitute available techniques for near-surface elementary profiling with high depth resolution. The principles of ion energy loss are discussed at first, as they constitute the basic physical processes underlying the profiling techniques. Examples are presented and discussed, mainly concerning applications in the area of high-k replacement materials for silicon oxide/oxinitride in ULSI technology. The possibility of profiling elements with nano or subnanometric resolution is giving a significant contribution to solve many problems of research and development in MOS structures for advanced ULSI technology. © 2005 American Institute of Physics.