Joachim N. Burghartz, Michael Hargrove, et al.
IEEE Transactions on Electron Devices
The experimental results in this paper provide evidence of high-performance symmetric and emitter-down operation of ‘s. SiGe-base transistors were fabricated by using Atmospheric-Pressure Chemical Vapor Deposition (APCVD) for the epitaxial growth of SiGe and Si layers, and a novel self-aligned device structure. Current gains of 2000 and 120, cutoff-frequencies of 64 GHz and 14 GHz, and maximum oscillation frequencies of 23 GHz and 10 GHz have been achieved for emitter-up and emitter-down operation, respectively. © 1994 IEEE.
Joachim N. Burghartz, Michael Hargrove, et al.
IEEE Transactions on Electron Devices
Joachim N. Burghartz, Robert C. McIntosh, et al.
IEEE Transactions on Electron Devices
Christos Dimitrakopoulos, Yu-Ming Lin, et al.
Journal of Vacuum Science and Technology B
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE T-MTT