Kausik Majumdar, Kota V. R. M. Murali, et al.
Nano Letters
A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 2/V * s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications. © 2006 IEEE.
Kausik Majumdar, Kota V. R. M. Murali, et al.
Nano Letters
Jonghae Kim, Jean-Olivier Plouchart, et al.
VLSI Circuits 2003
Yu-Ming Lin, Phaedon Avouris
DRC 2007
Yanqing Wu, Damon B. Farmer, et al.
ACS Nano