High mobility III-V channel MOSFETs for post-Si CMOS applications

Abstract

III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 μA/μm and transconductance of 793 μS/μm have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity. ©2009 IEEE.