Publication
Solid State Communications
Paper

Hall effect and magnetoresistance of (SN)x films

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Abstract

Hall effect and electrical conductivity have been investigated between 77 K and 300 K and the magnetoresistance at 4.2 K for a number of (SN)x films deposited at substrate temperatures between - 10 and 50°C. The small magnitude of the Hall mobility (≤ 1 cm2 Vsec-1 at 300 K) and its activated temperature dependence are interpreted in terms of a heterogenous model for (SN)x films with thin depletion layers separating highly conductive islands. The hole concentration in these islands (p ≈ 1021 cm-3, the microscopic mobility (μ ≈ 500 cm2 Vsec-1 at 4.2 K) and the temperatures dependence of μ are found to be close to values for (SN)x crystals. © 1978.

Date

01 Jan 1978

Publication

Solid State Communications

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