GaAs performance in Si technology: SiGe HBTs for mixed analog-digital applications

Abstract

This paper provides a review of the successful history of SiGe HBTs, from the first functionality demonstration in 1987 to the record breaking performance of a 1GHx, 12-bit DAC in 1993. Availability of 60 GHz Fmax bipolar devices in a fully integrated 0.5/0.25 μm BiCMOS process, allows high performance mixed signal applications to be implemented in Si technology. The intrinsic performance of SiGe transistors have been extended to 115 GHz fT with an early voltage of 110 volt, demonstrating the potential for microwave analog applications.