A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
X-ray micro-diffraction profiles using a synchrotron light source were analyzed via Fourier transformation for single crystal Aluminum and Copper samples subjected to micro-scale laser shock peening. Specifically, the asymmetric and broadened diffraction profiles registered across the shock peen region were observed and analyzed by classic Warren and Averbach (W-A) method [Warren, B.E., Averbach, B.L., 1950. The effect of cold-work distortion on X-ray patterns. Journal of Applied Physics 21, 595-599] and modified W-A method [Ungar, T., Borbely, A., 1996. The effect of dislocation contrast on X-ray line broadening: A new approach to line profile analysis. Applied Physics Letters 69, 3173-3175]. Average strain deviation, mosaic size and dislocation density were estimated for the first time with a spatial resolution of 5 μm. The results compare well with the simulation results obtained from FEM analysis and from electron backscatter diffraction (EBSD) measurements. Differences in response caused by different materials and crystalline orientations (1 1 0 and 0 0 1) were also studied. © 2004 Elsevier Ltd. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Igor Devetak, Andreas Winter
ISIT 2003
Hannaneh Hajishirzi, Julia Hockenmaier, et al.
UAI 2011
Arnon Amir, Michael Lindenbaum
IEEE Transactions on Pattern Analysis and Machine Intelligence