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Applied Physics Letters
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Formation of submicron epitaxial islands of Pd2Si on silicon

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Abstract

It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.

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Applied Physics Letters

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