Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
J. Tersoff
Applied Surface Science
T.N. Morgan
Semiconductor Science and Technology
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025