Publication
Solid State Communications
Paper

Chemically induced grain boundary migration in doped polycrystalline silicon films

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Abstract

Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.

Date

01 Jan 1988

Publication

Solid State Communications

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