Publication
EOS/ESD 2014
Conference paper

FET protection of GMR and TMR sensors

Abstract

TMR and GMR sensors used for reading data written on magnetic media can be damaged by ns wide pulses below 1 Volt. Since diodes turn on around 1 V, they offer little ESD protection. This paper explores the use of diode-connected FETs to protect MR sensors below 1 V.

Date

Publication

EOS/ESD 2014

Authors

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