Epi-GaAs surface treatment - impact of mixed phases on device performance

Abstract

Compound semiconductor cleaning and handling procedures are becoming increasingly critical, both before and after epitaxial growth. This is a direct result of both shrinking device dimensions and the advent of novel re-growth techniques. This paper focuses on the connection between various common processing techniques and GaAs surface chemistry, whith emphasis on control of mixed phases. Examples from both electronic properties and recent thermal etch/regrowth results will be used to illustrate problems and solutions in this area.