Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- IEDM 1992
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31 results for Alan C. Warren
Complementary p- and n-channel quantum-well MI3SFET's
- R.A. Kiehl
- M.A. Olson
- et al.
- 1988
- IEDM 1988
SELF-CONSISTENT CALCULATION OF ELECTRON STATES IN NARROW CHANNELS.
- S.E. Laux
- Alan C. Warren
- 1985
- IEDM 1985
A Gate-Quality Dielectric System for Sige Metal-Oxide-Semiconductor Devices
- Alan C. Warren
- 1991
- IEEE Electron Device Letters
1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As)
- Alan C. Warren
- J.H. Burroughes
- et al.
- 1991
- IEEE Electron Device Letters
Quasi one-dimensional conduction in multiple, parallel inversion lines
- Alan C. Warren
- D.A. Antoniadis
- et al.
- 1986
- Physical Review Letters
Semi-Classical Calculation of Charge Distributions in Ultra-Narrow Inversion Lines
- Alan C. Warren
- Dimitri A. Antoniadis
- et al.
- 1986
- IEEE Electron Device Letters
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
Surface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Optoelectronic applications of GaAs epilayers containing arsenic precipitates
- Alan C. Warren
- J. Woodall
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991