Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
We obtained a measure for τR, the electron-hole recombination time in bismuth, from 2-20°K. The value of τR at 4.8°K is 6 × 10-9 sec and decreases exponentially as the temperature increases with an activation energy of 42°K. The results were obtained from measurements of the Acoustomagnetoelectric effect (AME) at 11.3 and 29.5 Mc. An ancillary result is a T-2 dependence for the trigonal hole mobility above 8°K. © 1966.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
J.A. Barker, D. Henderson, et al.
Molecular Physics
Peter J. Price
Surface Science
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials