About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Microelectronics Reliability
Paper
Electromigration behavior of multilayered Al/Hf and Al/Ti fine lines and its dependence on Cu and Pd solute additions
Abstract
Electromigration behavior and the kinetics of intermetallic formation in fine lines of Al/Hf/Al, Al/Ti/Al and Ti/Al/Ti as a function of Cu and Pd solute additions have been measured. In Hf/Al films, a second higher temperature eutectic reaction occurred, characterized by a resistance decrease and associated HfAl3 redistribution. In Ti/Al films a second intermetallic phase (Ti9Al23) formed, dependent on both the deposition technique and annealing temperature. The reliability implications of: (1) the high temperature eutectic reaction in Hf/Al films, and (2) Ti9Al23 phase formation in Ti/Al films were considered. © 1992.