U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
The DX center, the lowest energy state of the donor in AlGaAs with x<0.22, is responsible for the reduced conductivity as well as the persistent photoconductivity observed in this material at low temperature. Extensive studies of the properties of this deep level in Si-doped AlGaAs are reviewed here. Data are presented showing that the characteristics of the DX center remain essentially unchanged when it is resonant with the conduction band (x < 0.22) and that, independent of other compensation mechanisms, the DX center therefore limits the free carrier concentration in Si-doped GaAs to a maximum of about 2 x 1019 cm-3. Recent measurements suggesting that the lattice relaxation involves the motion of the Si atom from the substitutional site toward an interstitial site are also presented. Evidence for the negative U model, that the DX level is the two electron state of the substitutional donor, is discussed. © 1989, Taylor & Francis Group, LLC. All rights reserved.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Revanth Kodoru, Atanu Saha, et al.
arXiv