Electrical properties and transport in boron nitride nanotubes

Abstract

The fabrication of electronic devices based on single-walled nitride nanotubes (BNNT) was discussed. The gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation. The devices showed an exponentially increasing current (Id) with the applied voltage bias (Vds) up to 35 V at room temperature.