Eine neue Methode zur Berechnung der elektrischen Leitfähigkeit von Halbleitern in starken homogenen elektrischen Feldern - I. Allgemeine Theorie

Abstract

The Boltzmann equation for electrons in a semiconductor is assumed to be of the form {Mathematical expression} where h is the Maxwell-Boltzmann distribution. The energy surface structure of the lattice electrons E(k) is assumed to be spheric. The stationary solutions for strong electric fields show a concentration of electrons into the field direction (field orientation), if the elastic collision frequency is not too large. This means, at least for large energies, that nearly all electrons are in a cone with small aperture around the field direction. Every transport problem whose collision operator can be reduced to the upper form at least for large energies, can be solved by a perturbation method whose zeroth order is the ideal field orientation. The conditions for a field orientation of the electron distribution to exist will be investigated. © 1968 Springer-Verlag.