Gottlieb S. Oehrlein, Holly L. Williams
Journal of Applied Physics
It is demonstrated with the use of in situ x-ray photoemission spectroscopy, secondary ion mass spectrometry, and transmission electron microscopy, that the commonly practiced in situ oxygen plasma/hydrofluoric acid dip treatment of reactive ion damaged silicon surfaces is insufficient in removing all reactive ion etching (RIE) related contaminants and damage. For CHF3/CO2 RIE the residual modifications are shown to be fluorine and carbon contamination and deeper lying modifications, e.g., hydrogen-induced extended Si defects. An enhanced silicon oxidation rate during air exposure has been observed for post-RIE-treated silicon, which correlates to the amount of residual fluorine.
Gottlieb S. Oehrlein, Holly L. Williams
Journal of Applied Physics
Tim D. Bestwick, Gottlieb S. Oehrlein, et al.
Applied Physics Letters
Xu Ouyang, Shwu-Jen Jeng, et al.
ICSICT 2008
Gottlieb S. Oehrlein, Arthur A. Bright, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films