Publication
EOS/ESD 2016
Conference paper
Dielectric breakdown of TMR sensors and the role of Joule heating
Abstract
For voltage (V) stress of TMRs, the log of the dielectric breakdown time is found to be linear in (H-γZaV/tB)/(kBT), where H, γ, Z, a, tB and kB are an activation energy, a parameter, charge, tunnel barrier lattice constant and thickness, and Boltzmann constant. T is the ambient plus Joule heating temperature of the tunnel barrier.