Publication
EOS/ESD 2016
Conference paper

Dielectric breakdown of TMR sensors and the role of Joule heating

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Abstract

For voltage (V) stress of TMRs, the log of the dielectric breakdown time is found to be linear in (H-γZaV/tB)/(kBT), where H, γ, Z, a, tB and kB are an activation energy, a parameter, charge, tunnel barrier lattice constant and thickness, and Boltzmann constant. T is the ambient plus Joule heating temperature of the tunnel barrier.

Date

14 Oct 2016

Publication

EOS/ESD 2016

Authors

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