IMW 2011
Conference paper

Demonstration of CAM and TCAM using phase change devices

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We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips. © 2011 IEEE.