Deep-ultraviolet interferometric lithography as a tool for assessment nf chemically amplified photoresist performance

Abstract

The precise control of the exposure step provided by interferometric photolithography facilitayes studies of chemically amplified resist physics, chemistry, and functional properties that are difficult using more conventional exposure techniques. We describe here the design and operating characteristics of a deep-ultraviolet interferometric lithography tool designed specifically for the study of high resolution chemically amplified resists. We provide an example of its use to evaluate resists response to controlled variations in aerial image contrast. © 1998 American Vacuum Society.